Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• Hauptverfasser: Neimash, V.B., Poroshin, V.M., Shepeliavyi, P.Ye., Yukhymchuk, V.O., Melnyk, V.V., Makara, M.A., Kuzmich, A.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117819
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Tin doping effect on crystallization of amorphous silicon
 obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ.

The influence of tin impurity on amorphous silicon crystallization was
 investigated using the methods of Raman scattering, Auger spectroscopy at ion etching,
 scanning electron microscopy and X-ray fluorescence microanalysis in thin films of
 Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4-
 nm size has been found in the amorphous matrix alloy formed at the temperature 300 C.
 Total volume of nanocrystals correlates with the content of tin and can comprise as much
 as 80% of the film. The effect of tin-induced crystallization of amorphous silicon
 occurred only if there are clusters of metallic tin in the amorphous matrix. The
 mechanism of tin-induced crystallization of silicon that has been proposed takes into
 account the processes in eutectic layer at the interface metal tin – amorphous silicon.