Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
The influence of tin impurity on amorphous silicon crystallization was
 investigated using the methods of Raman scattering, Auger spectroscopy at ion etching,
 scanning electron microscopy and X-ray fluorescence microanalysis in thin films of
 Si:Sn alloy manufactured by ther...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2013 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117819 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Tin doping effect on crystallization of amorphous silicon
 obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862714962559893504 |
|---|---|
| author | Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. |
| author_facet | Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. |
| citation_txt | Tin doping effect on crystallization of amorphous silicon
 obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of tin impurity on amorphous silicon crystallization was
investigated using the methods of Raman scattering, Auger spectroscopy at ion etching,
scanning electron microscopy and X-ray fluorescence microanalysis in thin films of
Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4-
nm size has been found in the amorphous matrix alloy formed at the temperature 300 C.
Total volume of nanocrystals correlates with the content of tin and can comprise as much
as 80% of the film. The effect of tin-induced crystallization of amorphous silicon
occurred only if there are clusters of metallic tin in the amorphous matrix. The
mechanism of tin-induced crystallization of silicon that has been proposed takes into
account the processes in eutectic layer at the interface metal tin – amorphous silicon.
|
| first_indexed | 2025-12-07T17:55:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117819 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:55:01Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. 2017-05-26T19:00:17Z 2017-05-26T19:00:17Z 2013 Tin doping effect on crystallization of amorphous silicon
 obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 61.66.Dk, -f; 61.72.Cc, J-, Tt; 61.82.Fk; 71.55.Cn https://nasplib.isofts.kiev.ua/handle/123456789/117819 The influence of tin impurity on amorphous silicon crystallization was
 investigated using the methods of Raman scattering, Auger spectroscopy at ion etching,
 scanning electron microscopy and X-ray fluorescence microanalysis in thin films of
 Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4-
 nm size has been found in the amorphous matrix alloy formed at the temperature 300 C.
 Total volume of nanocrystals correlates with the content of tin and can comprise as much
 as 80% of the film. The effect of tin-induced crystallization of amorphous silicon
 occurred only if there are clusters of metallic tin in the amorphous matrix. The
 mechanism of tin-induced crystallization of silicon that has been proposed takes into
 account the processes in eutectic layer at the interface metal tin – amorphous silicon. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum Article published earlier |
| spellingShingle | Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. |
| title | Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
| title_full | Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
| title_fullStr | Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
| title_full_unstemmed | Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
| title_short | Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
| title_sort | tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117819 |
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