Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions

• Datum: 2010
• Hauptverfasser: Lysiuk, V.O., Moskalenko, N.L., Staschuk, V.S., Kluy, M.I., Vakulenko, O.V., Androsyuk, I.G., Surmach, M.A., Pogoda, V.I.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117822
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions / V.O. Lysiuk, N.L. Moskalenko, V.S. Staschuk, M.I. Kluy, O.V. Vakulenko, I.G. Androsyuk, M.A. Surmach, V.I. Pogoda // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 103-109. — Бібліогр.: 10 назв. — англ.

Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM have shown that ion implantation essentially modifies near-surface structures with changing their optical, electrical and mechanical properties. Differences in the optical properties and surface structure between implanted and non-implanted systems are observed and explained by different properties of materials, widening interface “film–substrate” as well as by other known effects and phenomena. Enhanced adhesion of these films to substrate, nonselective spectral response is a base for effective and perspective application of the systems in development of high-sensitive pyroelectric detectors with a wide spectral range and high optical damage threshold.