Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It i...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 1999 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117856 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. |