Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It i...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117856 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862684467034849280 |
|---|---|
| author | Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. |
| author_facet | Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. |
| citation_txt | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation.
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| first_indexed | 2025-12-07T15:58:40Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117856 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:58:40Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. 2017-05-27T09:27:11Z 2017-05-27T09:27:11Z 1999 Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 85.30.K, 68.55.L https://nasplib.isofts.kiev.ua/handle/123456789/117856 A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation. S. A. V. would like to acknowledge the Alexander von Humbold Foundation for financial support. A.E.B. and R.V.K. were supported by STCU under Grant No. 464. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optically controlled 2D tunnelling in GaAs delta-doped p-n junction Article published earlier |
| spellingShingle | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction Vitusevich, S. A. Forster, A. Belyaev, A. E. Glavin, B. A. Indlekofer, K. M. Luth, H. Konakova, R. V. |
| title | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_full | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_fullStr | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_full_unstemmed | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_short | Optically controlled 2D tunnelling in GaAs delta-doped p-n junction |
| title_sort | optically controlled 2d tunnelling in gaas delta-doped p-n junction |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117856 |
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