Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117946
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide / Ye.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, D.I. Voitsikhovskiy, I. Hotovy, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 124-132. — Бібліогр.: 8 назв. — англ.

For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diff...