Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide
For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diff...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 1999 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117946 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide / Ye.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, D.I. Voitsikhovskiy, I. Hotovy, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 124-132. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862695699903152128 |
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| author | Venger, Ye.F. Milenin, V.V. Ermolovich, I.B. Konakova, R.V. Voitsikhovskiy, D.I. Hotovy, I. Ivanov, V. N. |
| author_facet | Venger, Ye.F. Milenin, V.V. Ermolovich, I.B. Konakova, R.V. Voitsikhovskiy, D.I. Hotovy, I. Ivanov, V. N. |
| citation_txt | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide / Ye.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, D.I. Voitsikhovskiy, I. Hotovy, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 124-132. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diffraction, atomic force microscopy, Auger electron spectroscopy, secondary-ion mass spectrometry, taking photoluminescence spectra and I - V curves. A physical model for contact formation was proposed. According to it, BxGa₁₋xAs (GaNxAs₁₋x) solid solutions are formed at the phase interfaces when titanium borides (nitrides) are deposited. The defects are produced in the semiconductor near-surface regions during heterostructure formation and further heat treatment. The correlation between the physico-chemical interactions at contact interfaces and the contact electrophysical parameters occurs through these defects. The objects of our investigation demonstrated high thermal stability. This was due to their two-layer structure formed by components having well-pronounced antidiffusion properties. As a result, the interdiffusion processes at the phase interfaces are drastically weakened.
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| first_indexed | 2025-12-07T16:25:35Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-117946 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:25:35Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Venger, Ye.F. Milenin, V.V. Ermolovich, I.B. Konakova, R.V. Voitsikhovskiy, D.I. Hotovy, I. Ivanov, V. N. 2017-05-27T16:55:52Z 2017-05-27T16:55:52Z 1999 Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide / Ye.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, D.I. Voitsikhovskiy, I. Hotovy, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 124-132. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 73.40.Ns, 68.60.Dv https://nasplib.isofts.kiev.ua/handle/123456789/117946 621.382.2 For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diffraction, atomic force microscopy, Auger electron spectroscopy, secondary-ion mass spectrometry, taking photoluminescence spectra and I - V curves. A physical model for contact formation was proposed. According to it, BxGa₁₋xAs (GaNxAs₁₋x) solid solutions are formed at the phase interfaces when titanium borides (nitrides) are deposited. The defects are produced in the semiconductor near-surface regions during heterostructure formation and further heat treatment. The correlation between the physico-chemical interactions at contact interfaces and the contact electrophysical parameters occurs through these defects. The objects of our investigation demonstrated high thermal stability. This was due to their two-layer structure formed by components having well-pronounced antidiffusion properties. As a result, the interdiffusion processes at the phase interfaces are drastically weakened. This work was partially supported by the Science and Technology Center of Ukraine (Project № 464). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide Article published earlier |
| spellingShingle | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide Venger, Ye.F. Milenin, V.V. Ermolovich, I.B. Konakova, R.V. Voitsikhovskiy, D.I. Hotovy, I. Ivanov, V. N. |
| title | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide |
| title_full | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide |
| title_fullStr | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide |
| title_full_unstemmed | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide |
| title_short | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide |
| title_sort | heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117946 |
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