Electron field emission from SiOx films

• Datum: 2003
• Hauptverfasser: Evtukh, А.А., Indutnyy, I.Z., Lisovskyy, I.P., Litvin, Yu.M., Litovchenko, V.G., Lytvyn, P.M., Mazunov, D.O., Rassamakin, Yu.V., Shepeliavyi, P.E.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117959
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electron field emission from SiOx films / А.А. Evtukh, I.Z. Indutnyy, I.P. Lisovskyy, Yu.M. Litvin, V.G. Litovchenko, P.M. Lytvyn, D.О. Mazunov, Yu.V. Rassamakin, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 32-36. — Бібліогр.: 16 назв. — англ.

Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced by silicon thermal evaporation in vacuum (10⁻⁵ Torr). Using optical spectrosc...