Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2003 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118018 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures / S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 202-204. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.5-10 s may even improve these parameters.
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| ISSN: | 1560-8034 |