Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118018 |
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| Zitieren: | Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures / S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 202-204. — Бібліогр.: 14 назв. — англ. |
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Abdizhaliev, S.K. Ismailov, K.A. Kamalov, A.B. Kudrik, Ya.Ya. 2017-05-28T06:15:27Z 2017-05-28T06:15:27Z 2003 Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures / S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 202-204. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 84.40.-x https://nasplib.isofts.kiev.ua/handle/123456789/118018 We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.5-10 s may even improve these parameters. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures |
| spellingShingle |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures Abdizhaliev, S.K. Ismailov, K.A. Kamalov, A.B. Kudrik, Ya.Ya. |
| title_short |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures |
| title_full |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures |
| title_fullStr |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures |
| title_full_unstemmed |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures |
| title_sort |
effect of microwave treatment on the parameters of au-tibx-gaas(sic 6h) surface-barrier structures |
| author |
Abdizhaliev, S.K. Ismailov, K.A. Kamalov, A.B. Kudrik, Ya.Ya. |
| author_facet |
Abdizhaliev, S.K. Ismailov, K.A. Kamalov, A.B. Kudrik, Ya.Ya. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.5-10 s may even improve these parameters.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118018 |
| citation_txt |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures / S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 202-204. — Бібліогр.: 14 назв. — англ. |
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2025-12-01T21:44:42Z |
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2025-12-01T21:44:42Z |
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