Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (λmax = 650...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2003 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118021 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Temperature dependence of luminescence pecularities in oxygen doped ZnTe films / N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 214-216. — Бібліогр.: 3 назв. — англ. |