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Temperature dependence of luminescence pecularities in oxygen doped ZnTe films

Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (λmax = 650...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2003
Main Authors:	Malushin, N.V., Skobeeva, V.M., Smyntyna, V.A.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118021
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Temperature dependence of luminescence pecularities in oxygen doped ZnTe films / N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 214-216. — Бібліогр.: 3 назв. — англ.

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