Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots
A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations of chemical bond energies at the boundary between CdSe cluster and SiOx frag...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2003 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118033 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots / V.P. Kunets, N.R. Kulish, M.P. Lisitsa, V.P. Bryksa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 299-302. — Бібліогр.: 15 назв. — англ. |
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Kunets, V.P. Kulish, N.R. Lisitsa, M.P. Bryksa, V.P. 2017-05-28T09:04:14Z 2017-05-28T09:04:14Z 2003 Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots / V.P. Kunets, N.R. Kulish, M.P. Lisitsa, V.P. Bryksa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 299-302. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 78.55.Et; 78.67.Hc; 71.55.Gs https://nasplib.isofts.kiev.ua/handle/123456789/118033 A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations of chemical bond energies at the boundary between CdSe cluster and SiOx fragment. The mechanism implies that the photoinduced break of Se-O bonds increases the electric field inside a quantum dot, which stimulates diffusion of the cadmium vacancy to the surface. This mechanism enables to explain the luminescence photodarkening effect in quantum dots as well as the degradation of the nonlinear optical device parameters. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots |
| spellingShingle |
Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots Kunets, V.P. Kulish, N.R. Lisitsa, M.P. Bryksa, V.P. |
| title_short |
Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots |
| title_full |
Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots |
| title_fullStr |
Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots |
| title_full_unstemmed |
Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots |
| title_sort |
mechanism of photoinduced luminescence degradation in cdsxse₁₋x quantum dots |
| author |
Kunets, V.P. Kulish, N.R. Lisitsa, M.P. Bryksa, V.P. |
| author_facet |
Kunets, V.P. Kulish, N.R. Lisitsa, M.P. Bryksa, V.P. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations of chemical bond energies at the boundary between CdSe cluster and SiOx fragment. The mechanism implies that the photoinduced break of Se-O bonds increases the electric field inside a quantum dot, which stimulates diffusion of the cadmium vacancy to the surface. This mechanism enables to explain the luminescence photodarkening effect in quantum dots as well as the degradation of the nonlinear optical device parameters.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118033 |
| citation_txt |
Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots / V.P. Kunets, N.R. Kulish, M.P. Lisitsa, V.P. Bryksa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 299-302. — Бібліогр.: 15 назв. — англ. |
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| first_indexed |
2025-12-07T16:13:44Z |
| last_indexed |
2025-12-07T16:13:44Z |
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