Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Kunets, V.P., Kulish, N.R., Lisitsa, M.P., Bryksa, V.P.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118033
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots / V.P. Kunets, N.R. Kulish, M.P. Lisitsa, V.P. Bryksa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 299-302. — Бібліогр.: 15 назв. — англ.

A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations of chemical bond energies at the boundary between CdSe cluster and SiOx frag...