Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect with dark line defects DLD and dark spot defects DSD. Fine structure of nega...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118091 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics / S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs'ka, O.P. Shakhov, V.M. Shapar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 499-504. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862740798367334400 |
|---|---|
| author | Kanevsky, S.O. Litovchenko, P.G. Opilat, V.Ja. Tartachnyk, V.P. Pinkovs'ka, M.B. Shakhov, O.P. Shapar, V.M. |
| author_facet | Kanevsky, S.O. Litovchenko, P.G. Opilat, V.Ja. Tartachnyk, V.P. Pinkovs'ka, M.B. Shakhov, O.P. Shapar, V.M. |
| citation_txt | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics / S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs'ka, O.P. Shakhov, V.M. Shapar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 499-504. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect with dark line defects DLD and dark spot defects DSD. Fine structure of negative differential resistance (NDR) region has appeared in I(V)-characteristics at low temperatures (77-110K). Gamma-ray irradiation leads to the broadening of I(V)-curve where oscillations occur. The same action is observed in I(V)- characteristics treated by ultrasonic. Current oscillations are connected with deep recombination centers in depleted region of GaP light diodes. As these levels are located far enough from p-n junction no one can observe them in TLDS spectra.The much greater voltage oscillation amplitude in the NDR region of I(V)- green diode characteristics comparing with red diodes may be bound with their lower defect level.
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| first_indexed | 2025-12-07T20:16:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118091 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:16:22Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kanevsky, S.O. Litovchenko, P.G. Opilat, V.Ja. Tartachnyk, V.P. Pinkovs'ka, M.B. Shakhov, O.P. Shapar, V.M. 2017-05-28T16:46:41Z 2017-05-28T16:46:41Z 2003 Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics / S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs'ka, O.P. Shakhov, V.M. Shapar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 499-504. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 78.60.Fi, 85.60.Ib https://nasplib.isofts.kiev.ua/handle/123456789/118091 Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect with dark line defects DLD and dark spot defects DSD. Fine structure of negative differential resistance (NDR) region has appeared in I(V)-characteristics at low temperatures (77-110K). Gamma-ray irradiation leads to the broadening of I(V)-curve where oscillations occur. The same action is observed in I(V)- characteristics treated by ultrasonic. Current oscillations are connected with deep recombination centers in depleted region of GaP light diodes. As these levels are located far enough from p-n junction no one can observe them in TLDS spectra.The much greater voltage oscillation amplitude in the NDR region of I(V)- green diode characteristics comparing with red diodes may be bound with their lower defect level. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics Article published earlier |
| spellingShingle | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics Kanevsky, S.O. Litovchenko, P.G. Opilat, V.Ja. Tartachnyk, V.P. Pinkovs'ka, M.B. Shakhov, O.P. Shapar, V.M. |
| title | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics |
| title_full | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics |
| title_fullStr | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics |
| title_full_unstemmed | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics |
| title_short | Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics |
| title_sort | study of gamma field induced degradation of green gap light diode electroluminescence characteristics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118091 |
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