Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect with dark line defects DLD and dark spot defects DSD. Fine structure of nega...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118091
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics / S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs'ka, O.P. Shakhov, V.M. Shapar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 499-504. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118091
record_format dspace
spelling Kanevsky, S.O.
Litovchenko, P.G.
Opilat, V.Ja.
Tartachnyk, V.P.
Pinkovs'ka, M.B.
Shakhov, O.P.
Shapar, V.M.
2017-05-28T16:46:41Z
2017-05-28T16:46:41Z
2003
Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics / S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs'ka, O.P. Shakhov, V.M. Shapar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 499-504. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS: 78.60.Fi, 85.60.Ib
https://nasplib.isofts.kiev.ua/handle/123456789/118091
Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect with dark line defects DLD and dark spot defects DSD. Fine structure of negative differential resistance (NDR) region has appeared in I(V)-characteristics at low temperatures (77-110K). Gamma-ray irradiation leads to the broadening of I(V)-curve where oscillations occur. The same action is observed in I(V)- characteristics treated by ultrasonic. Current oscillations are connected with deep recombination centers in depleted region of GaP light diodes. As these levels are located far enough from p-n junction no one can observe them in TLDS spectra.The much greater voltage oscillation amplitude in the NDR region of I(V)- green diode characteristics comparing with red diodes may be bound with their lower defect level.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
spellingShingle Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
Kanevsky, S.O.
Litovchenko, P.G.
Opilat, V.Ja.
Tartachnyk, V.P.
Pinkovs'ka, M.B.
Shakhov, O.P.
Shapar, V.M.
title_short Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
title_full Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
title_fullStr Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
title_full_unstemmed Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
title_sort study of gamma field induced degradation of green gap light diode electroluminescence characteristics
author Kanevsky, S.O.
Litovchenko, P.G.
Opilat, V.Ja.
Tartachnyk, V.P.
Pinkovs'ka, M.B.
Shakhov, O.P.
Shapar, V.M.
author_facet Kanevsky, S.O.
Litovchenko, P.G.
Opilat, V.Ja.
Tartachnyk, V.P.
Pinkovs'ka, M.B.
Shakhov, O.P.
Shapar, V.M.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect with dark line defects DLD and dark spot defects DSD. Fine structure of negative differential resistance (NDR) region has appeared in I(V)-characteristics at low temperatures (77-110K). Gamma-ray irradiation leads to the broadening of I(V)-curve where oscillations occur. The same action is observed in I(V)- characteristics treated by ultrasonic. Current oscillations are connected with deep recombination centers in depleted region of GaP light diodes. As these levels are located far enough from p-n junction no one can observe them in TLDS spectra.The much greater voltage oscillation amplitude in the NDR region of I(V)- green diode characteristics comparing with red diodes may be bound with their lower defect level.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118091
citation_txt Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics / S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs'ka, O.P. Shakhov, V.M. Shapar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 499-504. — Бібліогр.: 13 назв. — англ.
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first_indexed 2025-12-07T20:16:22Z
last_indexed 2025-12-07T20:16:22Z
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