Nucleation, growth and transformation of microdefects in FZ-Si
The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the pro...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118108 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. |