Nucleation, growth and transformation of microdefects in FZ-Si
The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the pro...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118108 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711595204870144 |
|---|---|
| author | Talanin, V.I. Talanin, I.E. |
| author_facet | Talanin, V.I. Talanin, I.E. |
| citation_txt | Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones.
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| first_indexed | 2025-12-07T17:31:14Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118108 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:31:14Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Talanin, V.I. Talanin, I.E. 2017-05-28T17:30:23Z 2017-05-28T17:30:23Z 2004 Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. 1560-8034 PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx https://nasplib.isofts.kiev.ua/handle/123456789/118108 The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Nucleation, growth and transformation of microdefects in FZ-Si Article published earlier |
| spellingShingle | Nucleation, growth and transformation of microdefects in FZ-Si Talanin, V.I. Talanin, I.E. |
| title | Nucleation, growth and transformation of microdefects in FZ-Si |
| title_full | Nucleation, growth and transformation of microdefects in FZ-Si |
| title_fullStr | Nucleation, growth and transformation of microdefects in FZ-Si |
| title_full_unstemmed | Nucleation, growth and transformation of microdefects in FZ-Si |
| title_short | Nucleation, growth and transformation of microdefects in FZ-Si |
| title_sort | nucleation, growth and transformation of microdefects in fz-si |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118108 |
| work_keys_str_mv | AT talaninvi nucleationgrowthandtransformationofmicrodefectsinfzsi AT talaninie nucleationgrowthandtransformationofmicrodefectsinfzsi |