SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an inter...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2004
Hauptverfasser: Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118115
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118115
record_format dspace
spelling Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kudryk, Ya.Ya.
Milenin, V.V.
Lytvyn, O.S.
Lytvyn, P.M.
Vlaskina, S.I.
Agueev, O.A.
Svetlichny, A.I.
Soloviev, S.I.
Sudarshan, T.S.
2017-05-28T17:42:31Z
2017-05-28T17:42:31Z
2004
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS: 85.30.Kk
https://nasplib.isofts.kiev.ua/handle/123456789/118115
Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
spellingShingle SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kudryk, Ya.Ya.
Milenin, V.V.
Lytvyn, O.S.
Lytvyn, P.M.
Vlaskina, S.I.
Agueev, O.A.
Svetlichny, A.I.
Soloviev, S.I.
Sudarshan, T.S.
title_short SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_full SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_fullStr SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_full_unstemmed SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_sort sic schottky-barrier diodes formed with tibx and zrbx amorphous layers
author Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kudryk, Ya.Ya.
Milenin, V.V.
Lytvyn, O.S.
Lytvyn, P.M.
Vlaskina, S.I.
Agueev, O.A.
Svetlichny, A.I.
Soloviev, S.I.
Sudarshan, T.S.
author_facet Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kudryk, Ya.Ya.
Milenin, V.V.
Lytvyn, O.S.
Lytvyn, P.M.
Vlaskina, S.I.
Agueev, O.A.
Svetlichny, A.I.
Soloviev, S.I.
Sudarshan, T.S.
publishDate 2004
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118115
citation_txt SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.
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