SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an inter...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118115 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862669390523138048 |
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| author | Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Lytvyn, O.S. Lytvyn, P.M. Vlaskina, S.I. Agueev, O.A. Svetlichny, A.I. Soloviev, S.I. Sudarshan, T.S. |
| author_facet | Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Lytvyn, O.S. Lytvyn, P.M. Vlaskina, S.I. Agueev, O.A. Svetlichny, A.I. Soloviev, S.I. Sudarshan, T.S. |
| citation_txt | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s.
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| first_indexed | 2025-12-07T15:28:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118115 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:28:01Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Lytvyn, O.S. Lytvyn, P.M. Vlaskina, S.I. Agueev, O.A. Svetlichny, A.I. Soloviev, S.I. Sudarshan, T.S. 2017-05-28T17:42:31Z 2017-05-28T17:42:31Z 2004 SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/118115 Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers Article published earlier |
| spellingShingle | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Lytvyn, O.S. Lytvyn, P.M. Vlaskina, S.I. Agueev, O.A. Svetlichny, A.I. Soloviev, S.I. Sudarshan, T.S. |
| title | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers |
| title_full | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers |
| title_fullStr | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers |
| title_full_unstemmed | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers |
| title_short | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers |
| title_sort | sic schottky-barrier diodes formed with tibx and zrbx amorphous layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118115 |
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