Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the region of hopping conduction, the operating signal of d...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118120 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott
temperature dependence of the forward current in a certain range of bias voltages and
low temperatures have studied from the point of their use as temperature sensors. In the
region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop
across the diode during the passage of a constant current, T is the temperature)
reproduces the Mott law (with opposite sign in the exponent), and the temperature
sensitivity of such sensors after passing through a minimum (as the temperature is
lowered) increases again up to the values typical of room temperature
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| ISSN: | 1560-8034 |