Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott
 temperature dependence of the forward current in a certain range of bias voltages and
 low temperatures have studied from the point of their use as temperature sensors. In the
 region of hopping conduction, t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118120 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862555230481154048 |
|---|---|
| author | Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| author_facet | Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| citation_txt | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott
temperature dependence of the forward current in a certain range of bias voltages and
low temperatures have studied from the point of their use as temperature sensors. In the
region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop
across the diode during the passage of a constant current, T is the temperature)
reproduces the Mott law (with opposite sign in the exponent), and the temperature
sensitivity of such sensors after passing through a minimum (as the temperature is
lowered) increases again up to the values typical of room temperature
|
| first_indexed | 2025-11-25T22:20:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118120 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T22:20:34Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. 2017-05-28T17:55:15Z 2017-05-28T17:55:15Z 2007 Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 07.07.Df, 61.72.Tt, 72.20.-I, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/118120 Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott
 temperature dependence of the forward current in a certain range of bias voltages and
 low temperatures have studied from the point of their use as temperature sensors. In the
 region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop
 across the diode during the passage of a constant current, T is the temperature)
 reproduces the Mott law (with opposite sign in the exponent), and the temperature
 sensitivity of such sensors after passing through a minimum (as the temperature is
 lowered) increases again up to the values typical of room temperature en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region Article published earlier |
| spellingShingle | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| title | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_full | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_fullStr | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_full_unstemmed | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_short | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_sort | characteristics of diode temperature sensors which exhibit mott conduction in low temperature region |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118120 |
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