Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Authors: Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118120
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ.

Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott
 temperature dependence of the forward current in a certain range of bias voltages and
 low temperatures have studied from the point of their use as temperature sensors. In the
 region of hopping conduction, t...