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Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the region of hopping conduction, t...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2007
Hauptverfasser:	Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118120
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ.

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