Compensation of hole conductivity in CdTe crystals doped with Cr

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Nikonyuk, E.S., Zakharuk, Z.I., Kuchma, M.I., Kovalets, M.O., Rarenko, A.I., Yuriychuk, I.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118128
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Compensation of hole conductivity in CdTe crystals doped with Cr / E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, M.O. Kovalets, A.I. Rarenko, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 77-79. — Бібліогр.: 8 назв. — англ.

We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of cadmium telluride crystals with Cr impurity le...