Optical recording of information pits in thin layers of chalcogenide semiconductors

The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, as well as the recording gaussian beam intensity, radius and exposure time...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2004
Main Authors: Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118142
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Optical recording of information pits in thin layers of chalcogenide semiconductors / A.N. Morozovska, S.A. Kostyukevych, L.L. Nikitenko, A.A. Kryuchin, A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 93-100. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine