Optical recording of information pits in thin layers of chalcogenide semiconductors

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• ISSN: 1560-8034
• Hauptverfasser: Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118142
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optical recording of information pits in thin layers of chalcogenide semiconductors / A.N. Morozovska, S.A. Kostyukevych, L.L. Nikitenko, A.A. Kryuchin, A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 93-100. — Бібліогр.: 18 назв. — англ.

The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, as well as the recording gaussian beam intensity,
 radius and exposure time. A rather simple analytical expression for the height profile of pits has been derived. It has been shown that this profile depending on photosensitive material parameters and recording beam characteristics could be almost rectangular, flat with rounding edges, spherical or parabolic. The proposed model describes adequately the height profile of pits recorded in thin layer chalcogenide semiconductors by a gaussian laser beam.