Optical recording of information pits in thin layers of chalcogenide semiconductors

Optical recording of information pits in thin layers of chalcogenide semiconductors

The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, as well as the recording gaussian beam intensity, radius and exposure time...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2004
Автори: Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118142
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Optical recording of information pits in thin layers of chalcogenide semiconductors / A.N. Morozovska, S.A. Kostyukevych, L.L. Nikitenko, A.A. Kryuchin, A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 93-100. — Бібліогр.: 18 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118142
record_format dspace
spelling Morozovska, A.N.
Kostyukevych, S.A.
Nikitenko, L.L.
Kryuchin, A.A.
Kudryavtsev, A.A.
Shepeliavyi, P.E.
Moskalenko, N.L.
2017-05-28T18:31:38Z
2017-05-28T18:31:38Z
2004
Optical recording of information pits in thin layers of chalcogenide semiconductors / A.N. Morozovska, S.A. Kostyukevych, L.L. Nikitenko, A.A. Kryuchin, A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 93-100. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS: 42.40.Ht
https://nasplib.isofts.kiev.ua/handle/123456789/118142
The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, as well as the recording gaussian beam intensity, radius and exposure time. A rather simple analytical expression for the height profile of pits has been derived. It has been shown that this profile depending on photosensitive material parameters and recording beam characteristics could be almost rectangular, flat with rounding edges, spherical or parabolic. The proposed model describes adequately the height profile of pits recorded in thin layer chalcogenide semiconductors by a gaussian laser beam.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical recording of information pits in thin layers of chalcogenide semiconductors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Optical recording of information pits in thin layers of chalcogenide semiconductors
spellingShingle Optical recording of information pits in thin layers of chalcogenide semiconductors
Morozovska, A.N.
Kostyukevych, S.A.
Nikitenko, L.L.
Kryuchin, A.A.
Kudryavtsev, A.A.
Shepeliavyi, P.E.
Moskalenko, N.L.
title_short Optical recording of information pits in thin layers of chalcogenide semiconductors
title_full Optical recording of information pits in thin layers of chalcogenide semiconductors
title_fullStr Optical recording of information pits in thin layers of chalcogenide semiconductors
title_full_unstemmed Optical recording of information pits in thin layers of chalcogenide semiconductors
title_sort optical recording of information pits in thin layers of chalcogenide semiconductors
author Morozovska, A.N.
Kostyukevych, S.A.
Nikitenko, L.L.
Kryuchin, A.A.
Kudryavtsev, A.A.
Shepeliavyi, P.E.
Moskalenko, N.L.
author_facet Morozovska, A.N.
Kostyukevych, S.A.
Nikitenko, L.L.
Kryuchin, A.A.
Kudryavtsev, A.A.
Shepeliavyi, P.E.
Moskalenko, N.L.
publishDate 2004
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, as well as the recording gaussian beam intensity, radius and exposure time. A rather simple analytical expression for the height profile of pits has been derived. It has been shown that this profile depending on photosensitive material parameters and recording beam characteristics could be almost rectangular, flat with rounding edges, spherical or parabolic. The proposed model describes adequately the height profile of pits recorded in thin layer chalcogenide semiconductors by a gaussian laser beam.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118142
citation_txt Optical recording of information pits in thin layers of chalcogenide semiconductors / A.N. Morozovska, S.A. Kostyukevych, L.L. Nikitenko, A.A. Kryuchin, A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 93-100. — Бібліогр.: 18 назв. — англ.
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AT kostyukevychsa opticalrecordingofinformationpitsinthinlayersofchalcogenidesemiconductors
AT nikitenkoll opticalrecordingofinformationpitsinthinlayersofchalcogenidesemiconductors
AT kryuchinaa opticalrecordingofinformationpitsinthinlayersofchalcogenidesemiconductors
AT kudryavtsevaa opticalrecordingofinformationpitsinthinlayersofchalcogenidesemiconductors
AT shepeliavyipe opticalrecordingofinformationpitsinthinlayersofchalcogenidesemiconductors
AT moskalenkonl opticalrecordingofinformationpitsinthinlayersofchalcogenidesemiconductors
first_indexed 2025-11-30T14:41:11Z
last_indexed 2025-11-30T14:41:11Z
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