Diluted magnetic А₁₋xMnxВ semiconductors

Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the 
 metallic conductivity is proposed. Using the coherent potential technique the electron scattering 
 by the randomly distributed Mn centers is taken into account. The exchange scattering of the &#...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2004
Main Authors: Bryksa, V.P., Tarasov, G.G., Masselink, W.T., Nolting, W., Mazur, Yu.I., Salamo, G.J.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118155
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the 
 metallic conductivity is proposed. Using the coherent potential technique the electron scattering 
 by the randomly distributed Mn centers is taken into account. The exchange scattering of the 
 electron spin by the localized magnetic mo exactly basing on the
 spin-polaron limit for the Vonsovskii Hamiltonian.
ISSN:1560-8034