Diluted magnetic А₁₋xMnxВ semiconductors
Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the 
 metallic conductivity is proposed. Using the coherent potential technique the electron scattering 
 by the randomly distributed Mn centers is taken into account. The exchange scattering of the &#...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2004 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118155 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the 
metallic conductivity is proposed. Using the coherent potential technique the electron scattering 
by the randomly distributed Mn centers is taken into account. The exchange scattering of the 
electron spin by the localized magnetic mo exactly basing on the
spin-polaron limit for the Vonsovskii Hamiltonian.
|
|---|---|
| ISSN: | 1560-8034 |