Diluted magnetic А₁₋xMnxВ semiconductors
Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers is taken into account. The exchange scattering of the electron spin by th...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118155 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the
metallic conductivity is proposed. Using the coherent potential technique the electron scattering
by the randomly distributed Mn centers is taken into account. The exchange scattering of the
electron spin by the localized magnetic mo exactly basing on the
spin-polaron limit for the Vonsovskii Hamiltonian.
|
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| ISSN: | 1560-8034 |