Diluted magnetic А₁₋xMnxВ semiconductors

Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers is taken into account. The exchange scattering of the electron spin by th...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2004
Hauptverfasser: Bryksa, V.P., Tarasov, G.G., Masselink, W.T., Nolting, W., Mazur, Yu.I., Salamo, G.J.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118155
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118155
record_format dspace
spelling Bryksa, V.P.
Tarasov, G.G.
Masselink, W.T.
Nolting, W.
Mazur, Yu.I.
Salamo, G.J.
2017-05-28T18:57:55Z
2017-05-28T18:57:55Z
2004
Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ.
1560-8034
PACS: 72.15.Gd; 72.20.Му; 73.61.Ga
https://nasplib.isofts.kiev.ua/handle/123456789/118155
Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers is taken into account. The exchange scattering of the electron spin by the localized magnetic mo exactly basing on the spin-polaron limit for the Vonsovskii Hamiltonian.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Diluted magnetic А₁₋xMnxВ semiconductors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Diluted magnetic А₁₋xMnxВ semiconductors
spellingShingle Diluted magnetic А₁₋xMnxВ semiconductors
Bryksa, V.P.
Tarasov, G.G.
Masselink, W.T.
Nolting, W.
Mazur, Yu.I.
Salamo, G.J.
title_short Diluted magnetic А₁₋xMnxВ semiconductors
title_full Diluted magnetic А₁₋xMnxВ semiconductors
title_fullStr Diluted magnetic А₁₋xMnxВ semiconductors
title_full_unstemmed Diluted magnetic А₁₋xMnxВ semiconductors
title_sort diluted magnetic а₁₋xmnxв semiconductors
author Bryksa, V.P.
Tarasov, G.G.
Masselink, W.T.
Nolting, W.
Mazur, Yu.I.
Salamo, G.J.
author_facet Bryksa, V.P.
Tarasov, G.G.
Masselink, W.T.
Nolting, W.
Mazur, Yu.I.
Salamo, G.J.
publishDate 2004
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers is taken into account. The exchange scattering of the electron spin by the localized magnetic mo exactly basing on the spin-polaron limit for the Vonsovskii Hamiltonian.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118155
citation_txt Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ.
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first_indexed 2025-12-07T16:44:27Z
last_indexed 2025-12-07T16:44:27Z
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