Diluted magnetic А₁₋xMnxВ semiconductors
Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the 
 metallic conductivity is proposed. Using the coherent potential technique the electron scattering 
 by the randomly distributed Mn centers is taken into account. The exchange scattering of the &#...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | Bryksa, V.P., Tarasov, G.G., Masselink, W.T., Nolting, W., Mazur, Yu.I., Salamo, G.J. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118155 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ. |
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