Optical study of thermally induced phase separation in evaporated SiOx films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118167
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optical study of thermally induced phase separation in evaporated SiOx films / I.Z. Indutnyy, I.P. Lisovskyy, D.O. Mazunov, P.E. Shepeliavyi, G.Yu. Rudko, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 161-167. — Бібліогр.: 33 назв. — англ.

SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, which leads to the formation of amorphous and crystalline Si nanoinclusions...