Optical study of thermally induced phase separation in evaporated SiOx films
SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, which leads to the formation of amorphous and crystalline Si nanoinclusions...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118167 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical study of thermally induced phase separation in evaporated SiOx films / I.Z. Indutnyy, I.P. Lisovskyy, D.O. Mazunov, P.E. Shepeliavyi, G.Yu. Rudko, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 161-167. — Бібліогр.: 33 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862668072464154624 |
|---|---|
| author | Indutnyy, I.Z. Lisovskyy, I.P. Mazunov, D.O. Shepeliavyi, P.E. Rudko, G.Yu. Dan'ko, V.A. |
| author_facet | Indutnyy, I.Z. Lisovskyy, I.P. Mazunov, D.O. Shepeliavyi, P.E. Rudko, G.Yu. Dan'ko, V.A. |
| citation_txt | Optical study of thermally induced phase separation in evaporated SiOx films / I.Z. Indutnyy, I.P. Lisovskyy, D.O. Mazunov, P.E. Shepeliavyi, G.Yu. Rudko, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 161-167. — Бібліогр.: 33 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, which leads to the formation of amorphous and crystalline Si nanoinclusions, was investigated using photoluminescence and infrared spectroscopy. It is demonstrated that the heat treatment leads to the decomposition of molecular complexes of slightly oxidized Si and the formation of both Si clusters and molecular clusters containing heavily oxidized Si. The transformations of the oxide phase are almost completed after 5 min. of the thermal treatment. The films annealed at 700°C contain amorphous Si nanoclusters embedded into homogeneous SiO₁.₇₅ matrix (the volume share of amorphous Si phase is equal to ~17 vol.%). The films annealed at 1000°C represent Si nanocrystals (the volume share is equal to ~20 vol.%) surrounded by SiOx interface layers and embedded into SiO₂. Both types of samples - the ones with Si nanocrystals and with amorphous Si nanoinclusions – exhibit photoluminescence in visible and near infrared spectral range. PL peak is blueshifted and is 5 to 10 time more intense for amorphous as compared with crystalline nano-Si. The origin of the light emission may be related to electron-hole pairs recombination in amorphous nanoinclusions and carrier recombination through double Si=O bonds at the nc-Si – oxide matrix interface. 
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| first_indexed | 2025-12-07T15:24:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118167 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:24:12Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Indutnyy, I.Z. Lisovskyy, I.P. Mazunov, D.O. Shepeliavyi, P.E. Rudko, G.Yu. Dan'ko, V.A. 2017-05-29T05:28:57Z 2017-05-29T05:28:57Z 2004 Optical study of thermally induced phase separation in evaporated SiOx films / I.Z. Indutnyy, I.P. Lisovskyy, D.O. Mazunov, P.E. Shepeliavyi, G.Yu. Rudko, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 161-167. — Бібліогр.: 33 назв. — англ. 1560-8034 PACS: 78.66.Jg https://nasplib.isofts.kiev.ua/handle/123456789/118167 SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, which leads to the formation of amorphous and crystalline Si nanoinclusions, was investigated using photoluminescence and infrared spectroscopy. It is demonstrated that the heat treatment leads to the decomposition of molecular complexes of slightly oxidized Si and the formation of both Si clusters and molecular clusters containing heavily oxidized Si. The transformations of the oxide phase are almost completed after 5 min. of the thermal treatment. The films annealed at 700°C contain amorphous Si nanoclusters embedded into homogeneous SiO₁.₇₅ matrix (the volume share of amorphous Si phase is equal to ~17 vol.%). The films annealed at 1000°C represent Si nanocrystals (the volume share is equal to ~20 vol.%) surrounded by SiOx interface layers and embedded into SiO₂. Both types of samples - the ones with Si nanocrystals and with amorphous Si nanoinclusions – exhibit photoluminescence in visible and near infrared spectral range. PL peak is blueshifted and is 5 to 10 time more intense for amorphous as compared with crystalline nano-Si. The origin of the light emission may be related to electron-hole pairs recombination in amorphous nanoinclusions and carrier recombination through double Si=O bonds at the nc-Si – oxide matrix interface. 
 Remove selected en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optical study of thermally induced phase separation in evaporated SiOx films Article published earlier |
| spellingShingle | Optical study of thermally induced phase separation in evaporated SiOx films Indutnyy, I.Z. Lisovskyy, I.P. Mazunov, D.O. Shepeliavyi, P.E. Rudko, G.Yu. Dan'ko, V.A. |
| title | Optical study of thermally induced phase separation in evaporated SiOx films |
| title_full | Optical study of thermally induced phase separation in evaporated SiOx films |
| title_fullStr | Optical study of thermally induced phase separation in evaporated SiOx films |
| title_full_unstemmed | Optical study of thermally induced phase separation in evaporated SiOx films |
| title_short | Optical study of thermally induced phase separation in evaporated SiOx films |
| title_sort | optical study of thermally induced phase separation in evaporated siox films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118167 |
| work_keys_str_mv | AT indutnyyiz opticalstudyofthermallyinducedphaseseparationinevaporatedsioxfilms AT lisovskyyip opticalstudyofthermallyinducedphaseseparationinevaporatedsioxfilms AT mazunovdo opticalstudyofthermallyinducedphaseseparationinevaporatedsioxfilms AT shepeliavyipe opticalstudyofthermallyinducedphaseseparationinevaporatedsioxfilms AT rudkogyu opticalstudyofthermallyinducedphaseseparationinevaporatedsioxfilms AT dankova opticalstudyofthermallyinducedphaseseparationinevaporatedsioxfilms |