Belyaev, A., Foxon, C., Novikov, S., Makarovsky, O., Eaves, L., Kappers, M., . . . Naumov, A. (2004). Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Belyaev, A.E, et al. "Current Instabilities in Resonant Tunnelling Diodes Based on GaN/AlN Heterojunctions." Semiconductor Physics Quantum Electronics & Optoelectronics 2004.
MLA-Zitierstil (8. Ausg.)Belyaev, A.E, et al. "Current Instabilities in Resonant Tunnelling Diodes Based on GaN/AlN Heterojunctions." Semiconductor Physics Quantum Electronics & Optoelectronics, 2004.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.