Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2004
Автори: Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118170
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118170
record_format dspace
spelling Belyaev, A.E.
Foxon, C.T.
Novikov, S.V.
Makarovsky, O.
Eaves, L.
Kappers, M.J.
Barnard, J.S.
Humphreys, C.J.
Danylyuk, S.V.
Vitusevich, S.A.
Naumov, A.V.
2017-05-29T05:33:01Z
2017-05-29T05:33:01Z
2004
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS: 85.30.Mn, 85.30.Kk
https://nasplib.isofts.kiev.ua/handle/123456789/118170
Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature range from 4.2 to 300 K. It has been found that measured characteristics of DB-RTD have complex nonlinear behavior and reveal the current discontinuities of I–V curves. The features can be explained by the existence of polarization fields and interface defects. These effects strongly influence on the potential profile of the DB-RTD heterostructures. To understand physics of the processes, numerical simulations of the given structures, using a model based on real-time Green’s functions, have been performed. Comparative analysis of experimental and numerical data showed that the current instability and nonlinearity of characteristics of the nitride based DB-RTD can be connected with trapping the electrons onto interfacial and dislocation states in these heterostructures.
This work was carried out in Nottingham University under EPSRC contract GR/R46465. The authors would also like to acknowledge the contributions of Mr. R.I. Dykeman, Mr. J.S. Chazuhan, Mr. D. Taylor and Mr. J.R. Middleton for device fabrication. One of the authors (А.E.В) acknowledges the Royal Society and Deutsche Forschungsgemeinschaft for research grants. The work in FZJ was supported by the Office of Naval Research under Grant No. N00014-01-1-0828 (monitored by Dr. Colin Wood) and by Deutsche Forschungsgemeinschaft (Project KL 1342). The work at V. Lashkaryov Institute of Semiconductor Physics in Kiev was supported by CRDF Project No. UE2-2439-KV-02.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
spellingShingle Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
Belyaev, A.E.
Foxon, C.T.
Novikov, S.V.
Makarovsky, O.
Eaves, L.
Kappers, M.J.
Barnard, J.S.
Humphreys, C.J.
Danylyuk, S.V.
Vitusevich, S.A.
Naumov, A.V.
title_short Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_full Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_fullStr Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_full_unstemmed Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_sort current instabilities in resonant tunnelling diodes based on gan/aln heterojunctions
author Belyaev, A.E.
Foxon, C.T.
Novikov, S.V.
Makarovsky, O.
Eaves, L.
Kappers, M.J.
Barnard, J.S.
Humphreys, C.J.
Danylyuk, S.V.
Vitusevich, S.A.
Naumov, A.V.
author_facet Belyaev, A.E.
Foxon, C.T.
Novikov, S.V.
Makarovsky, O.
Eaves, L.
Kappers, M.J.
Barnard, J.S.
Humphreys, C.J.
Danylyuk, S.V.
Vitusevich, S.A.
Naumov, A.V.
publishDate 2004
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature range from 4.2 to 300 K. It has been found that measured characteristics of DB-RTD have complex nonlinear behavior and reveal the current discontinuities of I–V curves. The features can be explained by the existence of polarization fields and interface defects. These effects strongly influence on the potential profile of the DB-RTD heterostructures. To understand physics of the processes, numerical simulations of the given structures, using a model based on real-time Green’s functions, have been performed. Comparative analysis of experimental and numerical data showed that the current instability and nonlinearity of characteristics of the nitride based DB-RTD can be connected with trapping the electrons onto interfacial and dislocation states in these heterostructures.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118170
citation_txt Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ.
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first_indexed 2025-12-07T16:23:09Z
last_indexed 2025-12-07T16:23:09Z
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