Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2004 |
| Main Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118170 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862695037736845312 |
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| author | Belyaev, A.E. Foxon, C.T. Novikov, S.V. Makarovsky, O. Eaves, L. Kappers, M.J. Barnard, J.S. Humphreys, C.J. Danylyuk, S.V. Vitusevich, S.A. Naumov, A.V. |
| author_facet | Belyaev, A.E. Foxon, C.T. Novikov, S.V. Makarovsky, O. Eaves, L. Kappers, M.J. Barnard, J.S. Humphreys, C.J. Danylyuk, S.V. Vitusevich, S.A. Naumov, A.V. |
| citation_txt | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature range from 4.2 to 300 K. It has been found that measured characteristics of DB-RTD have complex nonlinear behavior and reveal the current discontinuities of I–V curves. The features can be explained by the existence of polarization fields and interface defects. These effects strongly influence on the potential profile of the DB-RTD heterostructures. To understand physics of the processes, numerical simulations of the given structures, using a model based on real-time Green’s functions, have been performed. Comparative analysis of experimental and numerical data showed that the current instability and nonlinearity of characteristics of the nitride based DB-RTD can be connected with trapping the electrons onto interfacial and dislocation states in these heterostructures.
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| first_indexed | 2025-12-07T16:23:09Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118170 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:23:09Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Foxon, C.T. Novikov, S.V. Makarovsky, O. Eaves, L. Kappers, M.J. Barnard, J.S. Humphreys, C.J. Danylyuk, S.V. Vitusevich, S.A. Naumov, A.V. 2017-05-29T05:33:01Z 2017-05-29T05:33:01Z 2004 Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 85.30.Mn, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/118170 Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature range from 4.2 to 300 K. It has been found that measured characteristics of DB-RTD have complex nonlinear behavior and reveal the current discontinuities of I–V curves. The features can be explained by the existence of polarization fields and interface defects. These effects strongly influence on the potential profile of the DB-RTD heterostructures. To understand physics of the processes, numerical simulations of the given structures, using a model based on real-time Green’s functions, have been performed. Comparative analysis of experimental and numerical data showed that the current instability and nonlinearity of characteristics of the nitride based DB-RTD can be connected with trapping the electrons onto interfacial and dislocation states in these heterostructures. This work was carried out in Nottingham University under EPSRC contract GR/R46465. The authors would also like to acknowledge the contributions of Mr. R.I. Dykeman, Mr. J.S. Chazuhan, Mr. D. Taylor and Mr. J.R. Middleton for device fabrication.
 One of the authors (А.E.В) acknowledges the Royal Society and Deutsche Forschungsgemeinschaft for research grants. The work in FZJ was supported by the Office of Naval Research under Grant No. N00014-01-1-0828 (monitored by Dr. Colin Wood) and by Deutsche Forschungsgemeinschaft (Project KL 1342). The work at V. Lashkaryov Institute of Semiconductor Physics in Kiev was supported by CRDF Project No. UE2-2439-KV-02. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions Article published earlier |
| spellingShingle | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions Belyaev, A.E. Foxon, C.T. Novikov, S.V. Makarovsky, O. Eaves, L. Kappers, M.J. Barnard, J.S. Humphreys, C.J. Danylyuk, S.V. Vitusevich, S.A. Naumov, A.V. |
| title | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions |
| title_full | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions |
| title_fullStr | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions |
| title_full_unstemmed | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions |
| title_short | Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions |
| title_sort | current instabilities in resonant tunnelling diodes based on gan/aln heterojunctions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118170 |
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