Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
In this work, we firstly investigated controlling the lattice parameter of IIIoxides
 used as substrates for III-nitrides heterostructures. It was shown that the atomic
 content change in III-sublattice gives large possibilities for precise cation controlling the
 lattice par...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118211 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Crystal lattice engineering the novel substrates
 for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |