Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large possibilities for precise cation controlling the lattice parameters. The developed t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118211 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |
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Osinsky, V. Dyachenko, O. 2017-05-29T12:48:42Z 2017-05-29T12:48:42Z 2010 Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 81.15.-z, 85.40.-e, 85.60.Jb https://nasplib.isofts.kiev.ua/handle/123456789/118211 In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large possibilities for precise cation controlling the lattice parameters. The developed technique is promising to make ideal substrates in IIInitride epitaxy of LED, LD and transistors with a high quantum efficiency and small noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride epitaxy with computer driving. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
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| title |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| spellingShingle |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures Osinsky, V. Dyachenko, O. |
| title_short |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_full |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_fullStr |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_full_unstemmed |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_sort |
crystal lattice engineering the novel substrates for iii-nitride-oxide heterostructures |
| author |
Osinsky, V. Dyachenko, O. |
| author_facet |
Osinsky, V. Dyachenko, O. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, we firstly investigated controlling the lattice parameter of IIIoxides
used as substrates for III-nitrides heterostructures. It was shown that the atomic
content change in III-sublattice gives large possibilities for precise cation controlling the
lattice parameters. The developed technique is promising to make ideal substrates in IIInitride
epitaxy of LED, LD and transistors with a high quantum efficiency and small
noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride
epitaxy with computer driving.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118211 |
| citation_txt |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |
| work_keys_str_mv |
AT osinskyv crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures AT dyachenkoo crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures |
| first_indexed |
2025-12-07T17:58:30Z |
| last_indexed |
2025-12-07T17:58:30Z |
| _version_ |
1850873280116817920 |