Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
In this work, we firstly investigated controlling the lattice parameter of IIIoxides
 used as substrates for III-nitrides heterostructures. It was shown that the atomic
 content change in III-sublattice gives large possibilities for precise cation controlling the
 lattice par...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118211 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Crystal lattice engineering the novel substrates
 for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862715405398704128 |
|---|---|
| author | Osinsky, V. Dyachenko, O. |
| author_facet | Osinsky, V. Dyachenko, O. |
| citation_txt | Crystal lattice engineering the novel substrates
 for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, we firstly investigated controlling the lattice parameter of IIIoxides
used as substrates for III-nitrides heterostructures. It was shown that the atomic
content change in III-sublattice gives large possibilities for precise cation controlling the
lattice parameters. The developed technique is promising to make ideal substrates in IIInitride
epitaxy of LED, LD and transistors with a high quantum efficiency and small
noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride
epitaxy with computer driving.
|
| first_indexed | 2025-12-07T17:58:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118211 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:58:30Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Osinsky, V. Dyachenko, O. 2017-05-29T12:48:42Z 2017-05-29T12:48:42Z 2010 Crystal lattice engineering the novel substrates
 for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 81.15.-z, 85.40.-e, 85.60.Jb https://nasplib.isofts.kiev.ua/handle/123456789/118211 In this work, we firstly investigated controlling the lattice parameter of IIIoxides
 used as substrates for III-nitrides heterostructures. It was shown that the atomic
 content change in III-sublattice gives large possibilities for precise cation controlling the
 lattice parameters. The developed technique is promising to make ideal substrates in IIInitride
 epitaxy of LED, LD and transistors with a high quantum efficiency and small
 noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride
 epitaxy with computer driving. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures Article published earlier |
| spellingShingle | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures Osinsky, V. Dyachenko, O. |
| title | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_full | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_fullStr | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_full_unstemmed | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_short | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_sort | crystal lattice engineering the novel substrates for iii-nitride-oxide heterostructures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118211 |
| work_keys_str_mv | AT osinskyv crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures AT dyachenkoo crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures |