Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Osinsky, V., Dyachenko, O.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118211
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Crystal lattice engineering the novel substrates
 for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ.

In this work, we firstly investigated controlling the lattice parameter of IIIoxides
 used as substrates for III-nitrides heterostructures. It was shown that the atomic
 content change in III-sublattice gives large possibilities for precise cation controlling the
 lattice par...