Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge

• Datum: 2010
• Hauptverfasser: Dmitruk, N.L., Borkovskaya, O.Yu., Havrylenko, T.S., Naumenko, D.O., Petrik, P., Meza-Laguna, V., Basiuk, E.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118234
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge / N.L. Dmitruk, O.Yu. Borkovskaya, T.S. Havrylenko, D.O. Naumenko, P. Petrik, V. Meza-Laguna, E.V. Basiuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 180-185. — Бібліогр.: 21 назв. — англ.

Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8- dithiol (DT). These chemically cross-linked C₆₀ films are capa...