Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Dmitruk, N.L., Borkovskaya, O.Yu., Havrylenko, T.S., Naumenko, D.O., Petrik, P., Meza-Laguna, V., Basiuk, E.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118234
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of chemical modification of thin C₆₀ fullerene films
 on the fundamental absorption edge / N.L. Dmitruk, O.Yu. Borkovskaya, T.S. Havrylenko, D.O. Naumenko, P. Petrik, V. Meza-Laguna, E.V. Basiuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 180-185. — Бібліогр.: 21 назв. — англ.

Fullerene C₆₀ films were grown using physical vapor deposition on Si
 substrates at room temperature. Then chemical modification with cross-linking these
 films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8-
 dithiol (DT). These chemically cross-linked C₆₀ films are capable of stable binding the
 Ag or Au nanoclusters. Optical properties of the obtained nanostructured hybrid films
 were investigated by both reflectance spectroscopy and spectral ellipsometry within the
 spectral range 1.55 to 5.0 eV at various angles of incidence. From the spectral
 dependences of the extinction coefficient in the region of optical absorption edge, the
 physical nature of the fundamental allowed direct band-gap transitions between HOMOLUMO
 states Eg, the optical absorption edge near the intrinsic transition Eo, and
 exponential tail of the density-of-states caused by defects have been determined.
 Influence of chemical modification and decoration of metal nanoparticles on the above
 mentioned parameters has been analyzed.