Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge
Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8- dithiol (DT). These chemically cross-linked C₆₀ films are capa...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118234 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge / N.L. Dmitruk, O.Yu. Borkovskaya, T.S. Havrylenko, D.O. Naumenko, P. Petrik, V. Meza-Laguna, E.V. Basiuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 180-185. — Бібліогр.: 21 назв. — англ. |