Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of n − AsGe and n − PSi , and in the compensated crystals of n −Si , the mobility...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2012 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118240 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. |