Gaidar, G. (2012). Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationGaidar, G.P. "Influence of γ-irradiation (⁶⁰Со) on the Concentration and Mobility of Carriers in Ge and Si Single Crystals of N-type." Semiconductor Physics Quantum Electronics & Optoelectronics 2012.
MLA (8th ed.) CitationGaidar, G.P. "Influence of γ-irradiation (⁶⁰Со) on the Concentration and Mobility of Carriers in Ge and Si Single Crystals of N-type." Semiconductor Physics Quantum Electronics & Optoelectronics, 2012.
Warning: These citations may not always be 100% accurate.