Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
The influence of γ-irradiation (⁶⁰Co) (within the dose range
 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium
 and silicon has been investigated. In the oxygen-containing samples of n − AsGe and
 n − PSi , and in the compensated crystals...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118240 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The influence of γ-irradiation (⁶⁰Co) (within the dose range
1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium
and silicon has been investigated. In the oxygen-containing samples of n − AsGe and
n − PSi , and in the compensated crystals of n −Si , the mobility is shown to grow
anomalously with the irradiation dose in the region of combined scattering of carriers.
Proposed in this paper is the model based on accounting partial neutralization of charge
of scattering centers by charge of radiation defects produced mainly around the scattering
centers. This model qualitatively explains the experimental data.
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| ISSN: | 1560-8034 |