Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• Автор: Gaidar, G.P.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118240
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ.

The influence of γ-irradiation (⁶⁰Co) (within the dose range
 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium
 and silicon has been investigated. In the oxygen-containing samples of n − AsGe and
 n − PSi , and in the compensated crystals of n −Si , the mobility is shown to grow
 anomalously with the irradiation dose in the region of combined scattering of carriers.
 Proposed in this paper is the model based on accounting partial neutralization of charge
 of scattering centers by charge of radiation defects produced mainly around the scattering
 centers. This model qualitatively explains the experimental data.