Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of n − AsGe and n − PSi , and in the compensated crystals of n −Si , the mobility...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2012 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118240 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. |
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Gaidar, G.P. 2017-05-29T13:42:43Z 2017-05-29T13:42:43Z 2012 Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.80.Ed, 61.82.Fk, 72.20.-i https://nasplib.isofts.kiev.ua/handle/123456789/118240 The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of n − AsGe and n − PSi , and in the compensated crystals of n −Si , the mobility is shown to grow anomalously with the irradiation dose in the region of combined scattering of carriers. Proposed in this paper is the model based on accounting partial neutralization of charge of scattering centers by charge of radiation defects produced mainly around the scattering centers. This model qualitatively explains the experimental data. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| spellingShingle |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type Gaidar, G.P. |
| title_short |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_full |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_fullStr |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_full_unstemmed |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_sort |
influence of γ-irradiation (⁶⁰со) on the concentration and mobility of carriers in ge and si single crystals of n-type |
| author |
Gaidar, G.P. |
| author_facet |
Gaidar, G.P. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The influence of γ-irradiation (⁶⁰Co) (within the dose range
1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium
and silicon has been investigated. In the oxygen-containing samples of n − AsGe and
n − PSi , and in the compensated crystals of n −Si , the mobility is shown to grow
anomalously with the irradiation dose in the region of combined scattering of carriers.
Proposed in this paper is the model based on accounting partial neutralization of charge
of scattering centers by charge of radiation defects produced mainly around the scattering
centers. This model qualitatively explains the experimental data.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118240 |
| citation_txt |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. |
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| first_indexed |
2025-12-07T18:13:50Z |
| last_indexed |
2025-12-07T18:13:50Z |
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1850874245407571968 |