Buchumschlag

Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of n − AsGe and n − PSi , and in the compensated crystals...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2012
ISSN:	1560-8034
1. Verfasser:	Gaidar, G.P.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118240
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
von: G. P. Gaidar
Veröffentlicht: (2012)

Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge
von: Gaidar, G.P.
Veröffentlicht: (2011)

Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation
von: Fedosov, A.V., et al.
Veröffentlicht: (2007)

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
von: Gaidar, G.P.
Veröffentlicht: (2018)

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
von: Baranskii, P.I., et al.
Veröffentlicht: (2012)

Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
von: Gaidar, G.P.
Veröffentlicht: (2015)

Some peculiarities of thermopower anisotropy in undeformed and elastically deformed n – Si and n – Ge single crystals
von: G. P. Gaidar, et al.
Veröffentlicht: (2015)

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals
von: G. P. Gaidar
Veröffentlicht: (2018)

Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
von: Zaitsev, R.V., et al.
Veröffentlicht: (2011)

Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
von: P. I. Baranskii, et al.
Veröffentlicht: (2012)

Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
von: Gaidar, G.P.
Veröffentlicht: (2014)

The impact of heat treatment on the magnetic sensitivity of irradiated by electrons single crystals n-Ge
von: Luniov, S.V., et al.
Veröffentlicht: (2019)

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
von: Gaidar, G.P., et al.
Veröffentlicht: (2017)

Concentration dependences of the anisotropy parameter of mobility K = μ⊥/μ || and the anisotropy parameter of electron-phonon drag thermopower M = α || ph/α⊥ ph IN n-Ge and n-Si
von: G. P. Gaidar, et al.
Veröffentlicht: (2014)

The method of shear modulus determination for n-Ge and n-Si single crystals
von: V. I. Shvabiuk, et al.
Veröffentlicht: (2017)

Influence of γ-irradiation on current-voltage characteristics of TIGaSe₂ single crystal
von: Ismailov, A.A., et al.
Veröffentlicht: (2009)

Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals
von: Taghiyev, T.B.
Veröffentlicht: (2011)

Photoluminescence of undoped and Yb-doped GaS single crystals irradiated with γ-quanta
von: Madatov, R.S., et al.
Veröffentlicht: (2021)

Changing of the anisotropy parameter of mobility in n-Ge single crystals with heterogeneous distribution of doping impurity
von: D. A. Zakharchuk, et al.
Veröffentlicht: (2014)

Features of radiation-defect annealing in n-Ge single crystals irradiated with high-energy electrons
von: S. V. Lunov, et al.
Veröffentlicht: (2019)

Features of radiation-defect annealing in n-Ge single crystals irradiated with high-energy electrons
von: S. V. Luniov, et al.
Veröffentlicht: (2019)

Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons
von: S. V. Lunov, et al.
Veröffentlicht: (2016)

Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
von: Madatov, R.S., et al.
Veröffentlicht: (2006)

Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
von: Koval, Yu.V.
Veröffentlicht: (2006)

Changes in Hall parameters after -irradiation (60So) of n-Ge
von: G. P. Gaidar
Veröffentlicht: (2011)

Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
von: O. O. Mamatkarimov, et al.
Veröffentlicht: (2012)

Changes in electrophysical properties of heavily doped n-Ge &lt;As&gt; single crystals under the influence of thermoannealings
von: G. P. Gaidar
Veröffentlicht: (2015)

Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
von: M. M. Krasko
Veröffentlicht: (2012)

Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
von: M. M. Krasko
Veröffentlicht: (2012)

Peculiarities of charge carriers transport in submicron Si-Ge whiskers
von: Druzhinin, A.A., et al.
Veröffentlicht: (2014)

Effect of electron irradiation on the scattering of carriers in YBa2Cu3O7–δ single crystalls
von: N. A. Azarenkov, et al.
Veröffentlicht: (2018)

Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals
von: H. P. Haidar, et al.
Veröffentlicht: (2017)

Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb
von: G. P. Gaidar
Veröffentlicht: (2014)

Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
von: S. V. Kondratenko
Veröffentlicht: (2015)

Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
von: Kondratenko, S.V.
Veröffentlicht: (2015)

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
von: G. P. Gaidar, et al.
Veröffentlicht: (2017)

Impact of γ-irradiation on dielectric and electric properties of TlInS₂ crystals
von: Sardarly, R.M., et al.
Veröffentlicht: (2019)

Features of tensoresistance in single crystals of germanium and silicon with different dopants
von: Baranskii, P.I., et al.
Veröffentlicht: (2016)

On the possibility to estimate the mobility edge position for charge carriers using single-particle averages
von: Ju. V. Skripnik, et al.
Veröffentlicht: (2018)

Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
von: Litovchenko, P.G., et al.
Veröffentlicht: (2014)