Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Author: Gaidar, G.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118240
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ.

The influence of γ-irradiation (⁶⁰Co) (within the dose range
 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium
 and silicon has been investigated. In the oxygen-containing samples of n − AsGe and
 n − PSi , and in the compensated crystals...