Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements
Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon syst...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2012 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118255 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862657898993156096 |
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| author | Gomeniuk, Yu.V. |
| author_facet | Gomeniuk, Yu.V. |
| citation_txt | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon systems, including transition metal (Hf) and rare-earth metal (Gd, Nd) oxides, ternary compounds (LaLuO₃) and silicate (LaSiOx), are presented. It was shown that the interface state densities can be as low as ( 1.5...2) × 10¹¹ eV⁻¹cm⁻² for Al-HfO₃-Si, Pt-Gd₂O₃-Si and Pt-LaLuO₃-Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor
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| first_indexed | 2025-12-02T06:42:43Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118255 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T06:42:43Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gomeniuk, Yu.V. 2017-05-29T14:08:21Z 2017-05-29T14:08:21Z 2012 Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 73.20.-r https://nasplib.isofts.kiev.ua/handle/123456789/118255 Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon systems, including transition metal (Hf) and rare-earth metal (Gd, Nd) oxides, ternary compounds (LaLuO₃) and silicate (LaSiOx), are presented. It was shown that the interface state densities can be as low as ( 1.5...2) × 10¹¹ eV⁻¹cm⁻² for Al-HfO₃-Si, Pt-Gd₂O₃-Si and Pt-LaLuO₃-Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor This work has been partly funded by the National
 Academy of Sciences of Ukraine in frames of the
 Complex Program of Fundamental Research
 “Nanosystems, nanomaterials and nanotechnologies”,
 project No.53/32/10 . Author is grateful to O. Buiu,
 S. Hall, M.C. Lemme, H.J. Osten, A. Laha, P.K. Hurley,
 K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, and
 M. Schmidt for providing the samples for measurements,
 and to V.S. Lysenko and A.N. Nazarov for useful
 discussions and valuable comments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements Article published earlier |
| spellingShingle | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements Gomeniuk, Yu.V. |
| title | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_full | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_fullStr | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_full_unstemmed | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_short | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_sort | determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118255 |
| work_keys_str_mv | AT gomeniukyuv determinationofinterfacestatedensityinhighkdielectricsiliconsystemfromconductancefrequencymeasurements |