Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the charac...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118257 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characteristics of gettering process in multicrystalline Si wafers with
 combined porous Si/Al getters / Sarikov, V. Naseka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 8-12. — Бібліогр.: 11 назв. — англ. |