Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the charac...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118257 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters / Sarikov, V. Naseka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 8-12. — Бібліогр.: 11 назв. — англ. |
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Sarikov, A. Naseka, V. 2017-05-29T14:12:23Z 2017-05-29T14:12:23Z 2012 Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters / Sarikov, V. Naseka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 8-12. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 61.72, 81.65.Tx https://nasplib.isofts.kiev.ua/handle/123456789/118257 In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the characteristics of increase in the minority charge carrier diffusion length as a result of gettering annealings have been determined. The obtained results are useful for technology of multicrystalline Si solar cells to improve their properties. This work has been carried out in the framework of the State Targeted Scientific and Technological Program “Creation of Chemical and Metallurgical Branch of the Production of Pure Silicon Material” during 2011 to 2015 (project − 3.31 “Development and implementation of the technology for the formation of stress-free homogeneous Si ingots”) en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters |
| spellingShingle |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters Sarikov, A. Naseka, V. |
| title_short |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters |
| title_full |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters |
| title_fullStr |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters |
| title_full_unstemmed |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters |
| title_sort |
characteristics of gettering process in multicrystalline si wafers with combined porous si/al getters |
| author |
Sarikov, A. Naseka, V. |
| author_facet |
Sarikov, A. Naseka, V. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the characteristics of increase in the minority charge carrier diffusion length as a result of gettering annealings have been determined. The obtained results are useful for technology of multicrystalline Si solar cells to improve their properties.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118257 |
| citation_txt |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters / Sarikov, V. Naseka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 8-12. — Бібліогр.: 11 назв. — англ. |
| work_keys_str_mv |
AT sarikova characteristicsofgetteringprocessinmulticrystallinesiwaferswithcombinedporoussialgetters AT nasekav characteristicsofgetteringprocessinmulticrystallinesiwaferswithcombinedporoussialgetters |
| first_indexed |
2025-12-07T20:57:16Z |
| last_indexed |
2025-12-07T20:57:16Z |
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1850884527101050880 |