Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Sarikov, A., Naseka, V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118257
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Characteristics of gettering process in multicrystalline Si wafers with
 combined porous Si/Al getters / Sarikov, V. Naseka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 8-12. — Бібліогр.: 11 назв. — англ.

In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the charac...