Current transport mechanisms in metal – high-k dielectric – silicon structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Author: Gomeniuk, Y.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118283
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Current transport mechanisms in metal – high-k
 dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ.

The mechanism of current transport in several high k -dielectric, including
 rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth
 metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V )
 and conductance-frequency measurements at temperatures 100-300 K. It was
 shown that the current through the dielectric layer is controlled either by Pool-Frenkel
 mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance
 through the localized states near the Fermi level. From the results of measurements, the
 dynamic dielectric constant k of the material, energy positions and bulk concentrations of
 traps inside the dielectric layers were determined.