Current transport mechanisms in metal – high-k dielectric – silicon structures
The mechanism of current transport in several high k -dielectric, including
 rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth
 metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V )
 and conductance-frequenc...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118283 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Current transport mechanisms in metal – high-k
 dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737454702788608 |
|---|---|
| author | Gomeniuk, Y.V. |
| author_facet | Gomeniuk, Y.V. |
| citation_txt | Current transport mechanisms in metal – high-k
 dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The mechanism of current transport in several high k -dielectric, including
rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth
metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V )
and conductance-frequency measurements at temperatures 100-300 K. It was
shown that the current through the dielectric layer is controlled either by Pool-Frenkel
mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance
through the localized states near the Fermi level. From the results of measurements, the
dynamic dielectric constant k of the material, energy positions and bulk concentrations of
traps inside the dielectric layers were determined.
|
| first_indexed | 2025-12-07T19:59:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118283 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:59:00Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gomeniuk, Y.V. 2017-05-29T14:47:49Z 2017-05-29T14:47:49Z 2012 Current transport mechanisms in metal – high-k
 dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ. 1560-8034 PACS 73.20.-r https://nasplib.isofts.kiev.ua/handle/123456789/118283 The mechanism of current transport in several high k -dielectric, including
 rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth
 metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V )
 and conductance-frequency measurements at temperatures 100-300 K. It was
 shown that the current through the dielectric layer is controlled either by Pool-Frenkel
 mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance
 through the localized states near the Fermi level. From the results of measurements, the
 dynamic dielectric constant k of the material, energy positions and bulk concentrations of
 traps inside the dielectric layers were determined. This work has been partly funded by the National
 Academy of Sciences of Ukraine in frames of the
 Complex Program of Fundamental Research
 “Nanosystems, nanomaterials and nanotechnologies”,
 project No. 53/ 32 /11 - H . Author is grateful to
 M.C. Lemme, H.J. Osten, A. Laha, P.K. Hurley,
 K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, and
 M. Schmidt for providing the samples for measurements,
 and to V.S. Lysenko and A.N. Nazarov for useful
 discussions and valuable comments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Current transport mechanisms in metal – high-k dielectric – silicon structures Article published earlier |
| spellingShingle | Current transport mechanisms in metal – high-k dielectric – silicon structures Gomeniuk, Y.V. |
| title | Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_full | Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_fullStr | Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_full_unstemmed | Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_short | Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_sort | current transport mechanisms in metal – high-k dielectric – silicon structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118283 |
| work_keys_str_mv | AT gomeniukyv currenttransportmechanismsinmetalhighkdielectricsiliconstructures |