Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
Narrow-gap mercury cadmium telluride thin films grown by MBE methods
 onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric
 heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were
 analyzed. It was determine...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118306 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Residual stresses and piezoelectric properties of the HgCdTe –
 based compound heterostructures under the anisotropic
 deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. |